NXV08H250DPT2

Active

ON Semiconductor

AUTOMOTIVE 80V DUAL HALF BRIDGE MOSFET MODULE WITH PRESSFIT SIGNAL PINS, APM17

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Package Drawing-MODBM-APM17-MFA, AUTOMOTIVE MODULE

Discrete Semiconductor Products

NXV08H250DPT2

Active

ON Semiconductor

AUTOMOTIVE 80V DUAL HALF BRIDGE MOSFET MODULE WITH PRESSFIT SIGNAL PINS, APM17

Deep-Dive with AI

DocumentsDatasheet Package Drawing-MODBM-APM17-MFA, AUTOMOTIVE MODULE

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NXV08H250DPT2

Configuration	4 N-Channel
Drain to Source Voltage (Vdss)	80 V
Gate Charge (Qg) (Max) @ Vgs	320 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	24350 pF
Mounting Type	Through Hole
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Package / Case	51.3 mm, 2.02 in
Package / Case	17-PowerDIP Module
Qualification	AEC-Q101
Supplier Device Package	APM17-MFA
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4.6 V

NXV08H250DPT2 Series

Automotive 80V Dual Half Bridge Mosfet Module with pressfit signal pins, APM17

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Qualification	Technology	Grade	Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case	Mounting Type	Operating Temperature	Package / Case	Rds On (Max) @ Id, Vgs	Package / Case	Rds On (Max) @ Id, Vgs
ON Semiconductor NXV08H250DPT2	80 V	APM17-MFA	AEC-Q101	MOSFET (Metal Oxide)	Automotive	4 N-Channel	125 °C	-40 °C	24350 pF	4.6 V	320 nC	2.02 in 51.3 mm	17-PowerDIP Module	Through Hole
ON Semiconductor NXV08H400XT2	80 V	APM17-MDA	AEC-Q101	MOSFET (Metal Oxide)	Automotive	4 N-Channel			30150 pF	4.6 V	502 nC	1.778 in	17-PowerDIP Module	Through Hole	175 °C	45.15 mm	0.71 mOhm 0.765 mOhm
ON Semiconductor NXV08H300DT1	80 V		AEC-Q101	MOSFET (Metal Oxide)	Automotive	4 N-Channel			30150 pF	4.6 V	502 nC		17-PowerDIP Module	Through Hole	175 °C	1.39 in	0.765 mOhm	35.3 mm	0.58 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	40	$ 60.83
Newark	Each	25	$ 76.51
		50	$ 74.48
		100	$ 72.03
		250	$ 69.59
ON Semiconductor	N/A	1	$ 54.26

Description

General part information

NXV08H250DPT2 Series

80V 0.71mΩ Automotive Dual Half Bridge Mosfet Power module for 6 phase inverter for 48V mild hybrid vehicle, with pressfit signal pins, electrically isolated DBC substrate, temp sense and Automotive Qualified.