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STMICROELECTRONICS STW13NK60Z
Discrete Semiconductor Products

STGWA8M120DF3

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STMicroelectronics

IGBTS TRENCH GATE FIELD-STOP IGBT, M SERIES 1200 V, 8 A LOW LOSS

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DocumentsTN1225+9
STMICROELECTRONICS STW13NK60Z
Discrete Semiconductor Products

STGWA8M120DF3

Active
STMicroelectronics

IGBTS TRENCH GATE FIELD-STOP IGBT, M SERIES 1200 V, 8 A LOW LOSS

Deep-Dive with AI

DocumentsTN1225+9

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGWA8M120DF3
Current - Collector (Ic) (Max) [Max]16 A
Current - Collector Pulsed (Icm)32 A
Gate Charge32 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]167 W
Reverse Recovery Time (trr)103 ns
Supplier Device PackageTO-247 Long Leads
Switching Energy370 µJ, 390 µJ
Td (on/off) @ 25°C [custom]20 ns
Td (on/off) @ 25°C [custom]126 ns
Test Condition8 A, 33 Ohm, 600 V, 15 V
Vce(on) (Max) @ Vge, Ic [Max]2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 372$ 4.10
Tube 1$ 3.24
10$ 2.73
100$ 2.20
600$ 1.96
1200$ 1.68
2400$ 1.58
5400$ 1.52
MouserN/A 600$ 1.63
1200$ 1.51
NewarkEach 1$ 5.23
10$ 3.75
25$ 3.74
60$ 3.33
120$ 2.91
270$ 2.90

Description

General part information

M Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.