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TO-247-3 EP Long Lead
Discrete Semiconductor Products

STGWA15M120DF3

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STMicroelectronics

IGBTS TRENCH GATE FIELD-STOP IGBT, M SERIES 1200 V, 15 A LOW LOSS

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TO-247-3 EP Long Lead
Discrete Semiconductor Products

STGWA15M120DF3

Active
STMicroelectronics

IGBTS TRENCH GATE FIELD-STOP IGBT, M SERIES 1200 V, 15 A LOW LOSS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGWA15M120DF3
Current - Collector (Ic) (Max) [Max]30 A
Current - Collector Pulsed (Icm)60 A
Gate Charge53 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]259 W
Reverse Recovery Time (trr)270 ns
Supplier Device PackageTO-247 Long Leads
Td (on/off) @ 25°C122 ns, 26 ns
Test Condition600 V, 22 Ohm, 15 A, 15 V
Vce(on) (Max) @ Vge, Ic2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 1.95
Tube 600$ 2.61
MouserN/A 1$ 4.53
10$ 3.64
100$ 2.94
600$ 2.10
1200$ 2.09

Description

General part information

M Series

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.