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FNA41060B2
Discrete Semiconductor Products

FSB50660SFT

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ON Semiconductor

INTELLIGENT POWER MODULE (IPM), MOTION CONTROL

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FNA41060B2
Discrete Semiconductor Products

FSB50660SFT

Active
ON Semiconductor

INTELLIGENT POWER MODULE (IPM), MOTION CONTROL

Technical Specifications

Parameters and characteristics for this part

SpecificationFSB50660SFT
Configuration3 Phase
Current3.1 A
Mounting TypeThrough Hole
Package / Case23-PowerDIP Module
Package / Case [x]0.748 in
Package / Case [y]19 mm
TypeMOSFET
Voltage600 V
Voltage - Isolation1500 VAC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 50$ 6.06
50$ 6.06

Description

General part information

FSB50660SFT Series

FSB50660SF and FSB50660SFT are power modules for motion control, SuperFET Series Based on Super Junction MOSFET (SuperFET) Technology as a Compact Inverter Solutionfor Small Power Motor Drive Applications Such as Refrigerators, Fans and Pumps. FSB50660SF and FSB50660SFT Contains Six SuperFET MOSFETs, Three Half-Bridge Gate Drive HVICs with Temperature Sensing, and Three Bootstrap Diodes in a Compact Package Fully Isolated and Optimized for Thermal Performance. Especially, Adopted SuperFET MOSFETs have Fast Trr Characteristics for Body-Diode. FSB50660SF and FSB50660SFT Features Low Electromagnetic Interference(EMI) Characteristics Through Optimizing Switching Speed and Reducing Parasitic Inductance. Since FSB50660SF and FSB50660SFT Employs MOSFETs as Power Switches, It Povides Much More Ruggedness and Larger Safe Operating Area (SOA) than IGBT-Based Power Modules. FSB50660SF and FSB50660SFT are the Right Solution for Compact and Reliable Inverter Designs Where the Assembly Space is Constrained.