Catalog
Intelligent Power Module (IPM), Motion Control
Key Features
• UL Certified No. E209204 (UL1557)
• 600 V RDS(on)= 700 mΩ(Max) SuperFET MOSFET 3-Phase Inverter with Gate Drivers and Protection
• Built-in Bootstrap Diodes Simplify PCB Layout
• Separate Open-Source Pins from Low-Side MOSFETS for Three-Phase Current-Sensing
• Active-HIGH Interface, Works with 3.3 / 5 V Logic, Schmitt-trigger Input
• Optimized for Low Electromagnetic Interference
• HVIC Temperature-Sensing Built-in for Temperature Monitoring
• HVIC for Gate Driving and Under-Voltage Protection
• Isolation Rating: 1500 Vrms / 1 min.
• Moisture Sensitive Level (MSL) 3
• RoHS Compliant
Description
AI
FSB50660SF and FSB50660SFT are power modules for motion control, SuperFET Series Based on Super Junction MOSFET (SuperFET) Technology as a Compact Inverter Solutionfor Small Power Motor Drive Applications Such as Refrigerators, Fans and Pumps. FSB50660SF and FSB50660SFT Contains Six SuperFET MOSFETs, Three Half-Bridge Gate Drive HVICs with Temperature Sensing, and Three Bootstrap Diodes in a Compact Package Fully Isolated and Optimized for Thermal Performance. Especially, Adopted SuperFET MOSFETs have Fast Trr Characteristics for Body-Diode. FSB50660SF and FSB50660SFT Features Low Electromagnetic Interference(EMI) Characteristics Through Optimizing Switching Speed and Reducing Parasitic Inductance. Since FSB50660SF and FSB50660SFT Employs MOSFETs as Power Switches, It Povides Much More Ruggedness and Larger Safe Operating Area (SOA) than IGBT-Based Power Modules. FSB50660SF and FSB50660SFT are the Right Solution for Compact and Reliable Inverter Designs Where the Assembly Space is Constrained.
