Discrete Semiconductor Products
STL120N10F8
ActiveSTMicroelectronics
N-CHANNEL ENHANCEMENT MODE STANDARD LEVEL 100 V, 4.6 MOHM MAX., 125 A STRIPFET F8 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE
Discrete Semiconductor Products
STL120N10F8
ActiveSTMicroelectronics
N-CHANNEL ENHANCEMENT MODE STANDARD LEVEL 100 V, 4.6 MOHM MAX., 125 A STRIPFET F8 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STL120N10F8 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 125 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3600 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) @ Id, Vgs | 4.6 mOhm |
| Supplier Device Package | PowerFlat™ (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STL120N10F8 Series
This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure.
It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.
Documents
Technical documentation and resources