Discrete Semiconductor Products

FQPF30N06

Obsolete

ON Semiconductor

MOSFET N-CH 60V 21A TO220F

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Discrete Semiconductor Products

FQPF30N06

Obsolete

ON Semiconductor

MOSFET N-CH 60V 21A TO220F

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FQPF30N06

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	945 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	39 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

FQPF30N06L Series

Power MOSFET, N-Channel, Logic Level, QFET<sup>®</sup>, 60 V, 22.5 A, 52 mΩ, TO-220F

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Power Dissipation (Max) [Max]
ON Semiconductor FQPF3N60	13 nC	3.6 Ohm	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-220-3 Full Pack	2 A	600 V	N-Channel	TO-220F-3	5 V	Through Hole	10 V	30 V	34 W	450 pF
ON Semiconductor FQPF3N25		2.2 Ohm	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-220-3 Full Pack	2.3 A	250 V	N-Channel	TO-220F-3	5 V	Through Hole	10 V	30 V	27 W		170 pF	5.2 nC
ON Semiconductor FQPF3N25		2.2 Ohm	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-220-3 Full Pack	2.3 A	250 V	N-Channel	TO-220F-3	5 V	Through Hole	10 V	30 V	27 W		170 pF	5.2 nC
ON Semiconductor FQPF34N20L		75 mOhm	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-220-3 Full Pack	17.5 A	200 V	N-Channel	TO-220F-3	2 V	Through Hole		20 V			3900 pF	72 nC	10 V	5 V	55 W
ON Semiconductor FQPF3N80C	16.5 nC	4.8 Ohm	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-220-3 Full Pack	3 A	800 V	N-Channel	TO-220F-3	5 V	Through Hole	10 V	30 V	39 W		705 pF
ON Semiconductor FQPF3N50C	13 nC	2.5 Ohm	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-220-3 Full Pack	3 A	500 V	N-Channel	TO-220F-3	4 V	Through Hole	10 V	30 V	25 W	365 pF
ON Semiconductor FQPF30N06L		35 mOhm	MOSFET (Metal Oxide)	-55 °C	175 ░C	TO-220-3 Full Pack	22.5 A	60 V	N-Channel	TO-220F-3	2.5 V	Through Hole		20 V	38 W		1040 pF	20 nC	10 V	5 V
ON Semiconductor FQPF3N50C	13 nC	2.5 Ohm	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-220-3 Full Pack	3 A	500 V	N-Channel	TO-220F-3	4 V	Through Hole	10 V	30 V	25 W	365 pF
ON Semiconductor FQPF3N90_NL	26 nC	4.25 Ohm	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-220-3 Full Pack	2.1 A	900 V	N-Channel	TO-220F-3	5 V	Through Hole	10 V	30 V	43 W		910 pF
ON Semiconductor FQPF30N06	25 nC	40 mOhm	MOSFET (Metal Oxide)	-55 °C	175 ░C	TO-220-3 Full Pack	21 A	60 V	N-Channel	TO-220F-3	4 V	Through Hole	10 V	25 V	39 W		945 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	523	$ 0.57
		523	$ 0.57

Description

General part information

FQPF30N06L Series

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Documents

Technical documentation and resources