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TO-220F-3
Discrete Semiconductor Products

FQPF3N90_NL

Obsolete
ON Semiconductor

MOSFET N-CH 900V 2.1A TO220F

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TO-220F-3
Discrete Semiconductor Products

FQPF3N90_NL

Obsolete
ON Semiconductor

MOSFET N-CH 900V 2.1A TO220F

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFQPF3N90_NL
Current - Continuous Drain (Id) @ 25°C2.1 A
Drain to Source Voltage (Vdss)900 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]26 nC
Input Capacitance (Ciss) (Max) @ Vds910 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)43 W
Rds On (Max) @ Id, Vgs4.25 Ohm
Supplier Device PackageTO-220F-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

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Description

General part information

FQPF30N06L Series

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Documents

Technical documentation and resources