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TO-220F
Discrete Semiconductor Products

FQPF3N60

Obsolete
ON Semiconductor

MOSFET N-CH 600V 2A TO220F

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TO-220F
Discrete Semiconductor Products

FQPF3N60

Obsolete
ON Semiconductor

MOSFET N-CH 600V 2A TO220F

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DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFQPF3N60
Current - Continuous Drain (Id) @ 25°C2 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]450 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)34 W
Rds On (Max) @ Id, Vgs3.6 Ohm
Supplier Device PackageTO-220F-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

FQPF30N06L Series

Power MOSFET, N-Channel, Logic Level, QFET<sup>®</sup>, 60 V, 22.5 A, 52 mΩ, TO-220F

PartGate Charge (Qg) (Max) @ Vgs [Max]Rds On (Max) @ Id, VgsTechnologyOperating Temperature [Min]Operating Temperature [Max]Package / CaseCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)FET TypeSupplier Device PackageVgs(th) (Max) @ IdMounting TypeDrive Voltage (Max Rds On, Min Rds On)Vgs (Max)Power Dissipation (Max)Input Capacitance (Ciss) (Max) @ Vds [Max]Input Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On, Min Rds On) [Max]Drive Voltage (Max Rds On, Min Rds On) [Min]Power Dissipation (Max) [Max]
TO-220F
ON Semiconductor
FQPF3N60
13 nC
3.6 Ohm
MOSFET (Metal Oxide)
-55 °C
150 °C
TO-220-3 Full Pack
2 A
600 V
N-Channel
TO-220F-3
5 V
Through Hole
10 V
30 V
34 W
450 pF
IRG4IBC30WPBF-INF
ON Semiconductor
FQPF3N25
2.2 Ohm
MOSFET (Metal Oxide)
-55 °C
150 °C
TO-220-3 Full Pack
2.3 A
250 V
N-Channel
TO-220F-3
5 V
Through Hole
10 V
30 V
27 W
170 pF
5.2 nC
IRG4IBC30WPBF-INF
ON Semiconductor
FQPF3N25
2.2 Ohm
MOSFET (Metal Oxide)
-55 °C
150 °C
TO-220-3 Full Pack
2.3 A
250 V
N-Channel
TO-220F-3
5 V
Through Hole
10 V
30 V
27 W
170 pF
5.2 nC
TO-220F
ON Semiconductor
FQPF34N20L
75 mOhm
MOSFET (Metal Oxide)
-55 °C
150 °C
TO-220-3 Full Pack
17.5 A
200 V
N-Channel
TO-220F-3
2 V
Through Hole
20 V
3900 pF
72 nC
10 V
5 V
55 W
TO-220F
ON Semiconductor
FQPF3N80C
16.5 nC
4.8 Ohm
MOSFET (Metal Oxide)
-55 °C
150 °C
TO-220-3 Full Pack
3 A
800 V
N-Channel
TO-220F-3
5 V
Through Hole
10 V
30 V
39 W
705 pF
INFINFIPAN60R360PFD7SXKSA1
ON Semiconductor
FQPF3N50C
13 nC
2.5 Ohm
MOSFET (Metal Oxide)
-55 °C
150 °C
TO-220-3 Full Pack
3 A
500 V
N-Channel
TO-220F-3
4 V
Through Hole
10 V
30 V
25 W
365 pF
TO-220F
ON Semiconductor
FQPF30N06L
35 mOhm
MOSFET (Metal Oxide)
-55 °C
175 ░C
TO-220-3 Full Pack
22.5 A
60 V
N-Channel
TO-220F-3
2.5 V
Through Hole
20 V
38 W
1040 pF
20 nC
10 V
5 V
INFINFIPAN60R360PFD7SXKSA1
ON Semiconductor
FQPF3N50C
13 nC
2.5 Ohm
MOSFET (Metal Oxide)
-55 °C
150 °C
TO-220-3 Full Pack
3 A
500 V
N-Channel
TO-220F-3
4 V
Through Hole
10 V
30 V
25 W
365 pF
TO-220F-3
ON Semiconductor
FQPF3N90_NL
26 nC
4.25 Ohm
MOSFET (Metal Oxide)
-55 °C
150 °C
TO-220-3 Full Pack
2.1 A
900 V
N-Channel
TO-220F-3
5 V
Through Hole
10 V
30 V
43 W
910 pF
TO-220F
ON Semiconductor
FQPF30N06
25 nC
40 mOhm
MOSFET (Metal Oxide)
-55 °C
175 ░C
TO-220-3 Full Pack
21 A
60 V
N-Channel
TO-220F-3
4 V
Through Hole
10 V
25 V
39 W
945 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

FQPF30N06L Series

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Documents

Technical documentation and resources

Datasheet

Datasheet