Discrete Semiconductor Products

SCT055W65G3-4AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 650 V, 58 MOHM TYP., 30 A IN AN HIP247-4 PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

Documents +24

Discrete Semiconductor Products

SCT055W65G3-4AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 650 V, 58 MOHM TYP., 30 A IN AN HIP247-4 PACKAGE

Deep-Dive with AI

Documents +24

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT055W65G3-4AG

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	32 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	721 pF
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-55 ░C
Package / Case	TO-247-4
Power Dissipation (Max)	210 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	72 mOhm
Supplier Device Package	TO-247-4
Vgs (Max) [Max]	18 V, -5 V
Vgs(th) (Max) @ Id	4.2 V

SCT055W65G3-4AG Series

Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HiP247-4 package

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Mounting Type	Qualification	Vgs (Max) [Max]	Vgs(th) (Max) @ Id	FET Type	Grade	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics SCT055W65G3-4AG	TO-247-4	721 pF	210 W	Through Hole	AEC-Q101	-5 V 18 V	4.2 V	N-Channel	Automotive	72 mOhm	15 V 18 V	TO-247-4	30 A	650 V	200 °C	-55 ░C	32 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 8.01
Newark	Each	1	$ 15.90
		10	$ 14.45
		25	$ 14.16
		60	$ 13.60
		120	$ 13.03
		270	$ 12.75

Description

General part information

SCT055W65G3-4AG Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.