SCT055W65G3-4AG Series

Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HiP247-4 package

Catalog

Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HiP247-4 package

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Mounting Type	Qualification	Vgs (Max) [Max]	Vgs(th) (Max) @ Id	FET Type	Grade	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics SCT055W65G3-4AG	TO-247-4	721 pF	210 W	Through Hole	AEC-Q101	-5 V 18 V	4.2 V	N-Channel	Automotive	72 mOhm	15 V 18 V	TO-247-4	30 A	650 V	200 °C	-55 ░C	32 nC

Catalog

Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HiP247-4 package

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.