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Pkg 5868
Discrete Semiconductor Products

SI1012CR-T1-GE3

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Pkg 5868
Discrete Semiconductor Products

SI1012CR-T1-GE3

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSI1012CR-T1-GE3
Current - Continuous Drain (Id) @ 25°C630 mA
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]43 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-75, SOT-416
Power Dissipation (Max)240 mW
Rds On (Max) @ Id, Vgs396 mOhm
Supplier Device PackageSC-75A
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.45
10$ 0.32
100$ 0.16
500$ 0.14
1000$ 0.11
Digi-Reel® 1$ 0.45
10$ 0.32
100$ 0.16
500$ 0.14
1000$ 0.11
Tape & Reel (TR) 3000$ 0.09
6000$ 0.08
9000$ 0.08
15000$ 0.07
21000$ 0.07

Description

General part information

SI1012 Series

N-Channel 20 V 630mA (Ta) 240mW (Ta) Surface Mount SC-75A

Documents

Technical documentation and resources