SI1012 Series

Catalog

MOSFET N-CH 20V 500MA SC75A

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SI1012R-T1-E3	6 V	-55 °C	150 °C	700 mOhm	SC-75 SOT-416	500 mA	N-Channel	150 mW	20 V	0.75 nC	MOSFET (Metal Oxide)	900 mV	Surface Mount	1.8 V 4.5 V	SC-75A
Vishay General Semiconductor - Diodes Division SI1012X-T1-E3	6 V	-55 °C	150 °C	700 mOhm	SC-89 SOT-490	500 mA	N-Channel	250 mW	20 V	0.75 nC	MOSFET (Metal Oxide)	900 mV	Surface Mount	1.8 V 4.5 V	SC-89-3
Vishay General Semiconductor - Diodes Division SI1012CR-T1-GE3	8 V	-55 °C	150 °C	396 mOhm	SC-75 SOT-416	630 mA	N-Channel		20 V	2 nC	MOSFET (Metal Oxide)	1 V	Surface Mount	1.5 V 4.5 V	SC-75A	43 pF	240 mW