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SI1012X-T1-E3
Discrete Semiconductor Products

SI1012X-T1-E3

Obsolete

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SI1012X-T1-E3
Discrete Semiconductor Products

SI1012X-T1-E3

Obsolete

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSI1012X-T1-E3
Current - Continuous Drain (Id) @ 25°C500 mA
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]0.75 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-89, SOT-490
Power Dissipation (Max) [Max]250 mW
Rds On (Max) @ Id, Vgs700 mOhm
Supplier Device PackageSC-89-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)6 V
Vgs(th) (Max) @ Id900 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

SI1012 Series

N-Channel 20 V 500mA (Ta) 250mW (Ta) Surface Mount SC-89-3

Documents

Technical documentation and resources