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NVE IL3122-3E
Integrated Circuits (ICs)

L6390D

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STMicroelectronics

GATE DRIVER, 2 CHANNELS, HIGH SIDE AND LOW SIDE, MOSFET, 16 PINS, SOIC

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NVE IL3122-3E
Integrated Circuits (ICs)

L6390D

Active
STMicroelectronics

GATE DRIVER, 2 CHANNELS, HIGH SIDE AND LOW SIDE, MOSFET, 16 PINS, SOIC

Technical Specifications

Parameters and characteristics for this part

SpecificationL6390D
Channel TypeIndependent
Current - Peak Output (Source, Sink) [custom]430 mA
Current - Peak Output (Source, Sink) [custom]290 mA
Driven ConfigurationHalf-Bridge
Gate TypeIGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]600 V
Input TypeNon-Inverting
Logic Voltage - VIL, VIH1.9 V, 1.1 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / Case16-SOIC
Package / Case0.154 in, 3.9 mm
Rise / Fall Time (Typ)75 ns
Rise / Fall Time (Typ)35 ns
Supplier Device Package16-SO
Voltage - Supply [Max]20 V
Voltage - Supply [Min]12.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 568$ 3.73

Description

General part information

L6390 Series

The L6390 is a full featured high voltage device manufactured with the BCD™ "offline" technology. It is a single-chip half-bridge gate driver for N-channel power MOSFETs or IGBTs. The high-side (floating) section is able to work with voltage rail up to 600 V.

Both device outputs can sink and source 430 mA and 290 mA respectively. Prevention from cross conduction is ensured by interlocking and programmable deadtime functions.

The device has dedicated input pins for each output and a shutdown pin. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing with control devices. Matched delays between low-side and high-side sections guarantee no cycle distortion and allow high frequency operation.