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Technical Specifications
Parameters and characteristics for this part
| Specification | L6390DTR |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) [custom] | 430 mA |
| Current - Peak Output (Source, Sink) [custom] | 290 mA |
| Driven Configuration | Half-Bridge |
| Gate Type | IGBT, MOSFET (N-Channel) |
| High Side Voltage - Max (Bootstrap) [Max] | 600 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH | 1.9 V, 1.1 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 16-SOIC |
| Package / Case | 0.154 in, 3.9 mm |
| Rise / Fall Time (Typ) | 75 ns |
| Rise / Fall Time (Typ) | 35 ns |
| Supplier Device Package | 16-SO |
| Voltage - Supply [Max] | 20 V |
| Voltage - Supply [Min] | 12.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
L6390 Series
The L6390 is a full featured high voltage device manufactured with the BCD™ "offline" technology. It is a single-chip half-bridge gate driver for N-channel power MOSFETs or IGBTs. The high-side (floating) section is able to work with voltage rail up to 600 V.
Both device outputs can sink and source 430 mA and 290 mA respectively. Prevention from cross conduction is ensured by interlocking and programmable deadtime functions.
The device has dedicated input pins for each output and a shutdown pin. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing with control devices. Matched delays between low-side and high-side sections guarantee no cycle distortion and allow high frequency operation.
