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MOSFET BVDSS: 25V~30V PowerDI5060-8 T&R 2.5K
Discrete Semiconductor Products

DMT10H010LPS-13

Active
Diodes Inc

TRANS MOSFET N-CH 100V 9.4A 8-PIN POWERDI T/R

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MOSFET BVDSS: 25V~30V PowerDI5060-8 T&R 2.5K
Discrete Semiconductor Products

DMT10H010LPS-13

Active
Diodes Inc

TRANS MOSFET N-CH 100V 9.4A 8-PIN POWERDI T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT10H010LPS-13
Current - Continuous Drain (Id) @ 25°C9.4 A
Current - Continuous Drain (Id) @ 25°C98 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]71 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]3000 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)1.2 W, 139 W
Rds On (Max) @ Id, Vgs9.5 mOhm
Supplier Device PackagePowerDI5060-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.49
10$ 1.22
100$ 0.95
500$ 0.81
1000$ 0.66
Digi-Reel® 1$ 1.49
10$ 1.22
100$ 0.95
500$ 0.81
1000$ 0.66
Tape & Reel (TR) 2500$ 0.60
5000$ 0.58

Description

General part information

DMT10H072LFDFQ Series

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.

Documents

Technical documentation and resources