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Package Image for U-DFN2020-6
Discrete Semiconductor Products

DMT10H072LFDF-7

Active
Diodes Inc

MOSFET, N-CH, 100V, 4A, UDFN2020 ROHS COMPLIANT: YES

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Package Image for U-DFN2020-6
Discrete Semiconductor Products

DMT10H072LFDF-7

Active
Diodes Inc

MOSFET, N-CH, 100V, 4A, UDFN2020 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT10H072LFDF-7
Current - Continuous Drain (Id) @ 25°C4 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5.1 nC
Input Capacitance (Ciss) (Max) @ Vds266 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UDFN Exposed Pad
Supplier Device PackageU-DFN2020-6 (Type F)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 3000$ 1.01
DigikeyCut Tape (CT) 1$ 0.66
10$ 0.57
100$ 0.40
500$ 0.33
1000$ 0.28
Digi-Reel® 1$ 1.06
10$ 0.67
100$ 0.44
500$ 0.34
1000$ 0.31
Tape & Reel (TR) 3000$ 0.26
6000$ 0.24
9000$ 0.23
15000$ 0.23
NewarkEach (Supplied on Cut Tape) 1$ 1.26
10$ 0.81
25$ 0.74
50$ 0.67
100$ 0.60
250$ 0.55
500$ 0.50
1000$ 0.47

Description

General part information

DMT10H072LFDFQ Series

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.