Specification	DMT10H015LCG-7

Current - Continuous Drain (Id) @ 25°C	9.4 A, 34 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	33.3 nC
Input Capacitance (Ciss) (Max) @ Vds	1871 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	155 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	V-DFN3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

DMT10H072LFDFQ Series

100V N-Channel Enhancement Mode MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case [y]	Package / Case [x]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]
Diodes Inc DMT10H072LFDF-7	266 pF	100 V	4 A	N-Channel	3 V	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad	4.5 V 10 V	5.1 nC	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V
Diodes Inc DMT10H015LPS-13	1871 pF	100 V	7.3 A 44 A	N-Channel	3.5 V	PowerDI5060-8	8-PowerTDFN	4.5 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	16 mOhm	33.3 nC
Diodes Inc DMT10H025LSS-13	1639 pF	100 V	7.1 A	N-Channel	3 V	8-SO	8-SOIC	4.5 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	25 mOhm	22.9 nC	3.9 mm	0.154 in	1.3 W 12.9 W
Diodes Inc DMT10H009LSS-13	2309 pF	100 V	13 A 48 A	N-Channel	3 V	8-SO	8-SOIC	4.5 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	9 mOhm	40.2 nC	3.9 mm	0.154 in	1.8 W
Diodes Inc DMT10H010LSS-13		100 V	11.5 A 29.5 A	N-Channel	2.8 V	8-SO	8-SOIC	4.5 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	9.5 mOhm	71 nC	3.9 mm	0.154 in	1.4 W	3000 pF
Diodes Inc DMT10H015LFG-7	1871 pF	100 V	10 A 42 A	N-Channel	3.5 V	POWERDI3333-8	8-PowerVDFN	6 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	13.5 mOhm	33.3 nC			2 W 35 W
Diodes Inc DMT10H010LPS-13		100 V	9.4 A	N-Channel	3.5 V	PowerDI5060-8	8-PowerTDFN	4.5 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	9.5 mOhm	71 nC			1.2 W 139 W	3000 pF	98 A
Diodes Inc DMT10H015LCG-7	1871 pF	100 V	9.4 A 34 A	N-Channel	3.5 V	V-DFN3333-8	8-PowerVDFN	4.5 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	155 °C	20 V	15 mOhm	33.3 nC			1 W
Diodes Inc DMT10H015LFG-13	1871 pF	100 V	10 A 42 A	N-Channel	3.5 V	POWERDI3333-8	8-PowerVDFN	6 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	13.5 mOhm	33.3 nC			2 W 35 W
Diodes Inc DMT10H072LFV-13	228 pF	100 V	4.7 A 20 A	N-Channel	2.8 V	PowerDI3333-8 (Type UX)	8-PowerVDFN	6 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V		4.5 nC						2 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.92
		10	$ 0.75
		100	$ 0.58
		500	$ 0.49
		1000	$ 0.40
	Digi-Reel®	1	$ 0.92
		10	$ 0.75
		100	$ 0.58
		500	$ 0.49
		1000	$ 0.40
	Tape & Reel (TR)	2000	$ 0.38
		6000	$ 0.36
		10000	$ 0.35
Newark	Each (Supplied on Cut Tape)	1	$ 1.55
		10	$ 1.12
		25	$ 1.02
		50	$ 0.93
		100	$ 0.83
		250	$ 0.77
		500	$ 0.73
		1000	$ 0.71

Description

General part information

DMT10H072LFDFQ Series

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.

Documents

Technical documentation and resources

Datasheet

Recommended Soldering Techniques

Technical Document

Product Change Notice EN

Datasheet