Discrete Semiconductor Products

STGB10M65DF2

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STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 10 A LOW LOSS

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Documents TN1224 +9

Discrete Semiconductor Products

STGB10M65DF2

Active

STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 10 A LOW LOSS

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Documents TN1224 +9

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGB10M65DF2

Current - Collector (Ic) (Max) [Max]	20 A
Current - Collector Pulsed (Icm)	40 A
Gate Charge	28 nC
IGBT Type	Trench Field Stop
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power - Max [Max]	115 W
Reverse Recovery Time (trr)	96 ns
Supplier Device Package	TO-263 (D2PAK)
Switching Energy	120 µJ, 270 µJ
Td (on/off) @ 25°C [custom]	91 ns
Td (on/off) @ 25°C [custom]	19 ns
Test Condition	400 V, 22 Ohm, 10 A, 15 V
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

STGB10 Series

Trench gate field-stop IGBT, H series 600 V, 10 A high speed

Part	Supplier Device Package	Switching Energy	Reverse Recovery Time (trr)	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Test Condition	Gate Charge	Operating Temperature [Max]	Operating Temperature [Min]	IGBT Type	Mounting Type	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Vce(on) (Max) @ Vge, Ic [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C
STMicroelectronics STGB10H60DF	TO-263 (D2PAK)	83 µJ 140 µJ	107 ns	115 W	600 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 A 10 Ohm 15 V 400 V	57 nC	175 °C	-55 °C	Trench Field Stop	Surface Mount	1.95 V	40 A	20 A
STMicroelectronics STGB10M65DF2	TO-263 (D2PAK)	120 µJ 270 µJ	96 ns	115 W	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 A 15 V 22 Ohm 400 V	28 nC	175 °C	-55 °C	Trench Field Stop	Surface Mount	2 V	40 A	20 A	91 ns	19 ns
STMicroelectronics STGB10NC60HDT4	D2PAK	31.8 µJ 95 µJ	22 ns	65 W	600 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5 A 10 Ohm 15 V 390 V	19.2 nC	150 °C	-55 °C		Surface Mount		30 A	20 A			2.5 V	72 ns	14.2 ns
STMicroelectronics STGB10NB37LZT4	D2PAK	2.4 mJ 5 mJ			440 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1 kOhm 5 V 10 A 328 V	28 nC	175 °C	-65 C		Surface Mount		40 A	20 A	8 µs	1.3 µs	1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.16
		10	$ 1.80
		100	$ 1.43
		500	$ 1.21
	Digi-Reel®	1	$ 2.16
		10	$ 1.80
		100	$ 1.43
		500	$ 1.21
	N/A	70	$ 2.98
	Tape & Reel (TR)	1000	$ 0.89
Newark	Each (Supplied on Cut Tape)	1	$ 3.46
		10	$ 2.44
		25	$ 2.24
		50	$ 2.05
		100	$ 1.85
		250	$ 1.72
		500	$ 1.59
		1000	$ 1.48

Description

General part information

STGB10 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Documents

Technical documentation and resources

Flyers

TN1224

Technical Notes & Articles

DS10849

Product Specifications

Flyers

STGB10M65DF2

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STGB10M65DF2

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Technical Specifications

STGB10 Series

Pricing

Description

STGB10 Series

Documents

Flyers

TN1224

DS10849

Flyers

Flyers

TN1378

AN4694

AN4544

TN1225

Product Change Notice EN

Datasheet

STGB10 Series