TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Discrete Semiconductor Products

STGB10NB37LZT4

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STMicroelectronics

IGBT, AEC-Q101, 18V, 20A, 175DEG C, 125W ROHS COMPLIANT: YES

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DocumentsDatasheet Product Change Notice EN

Discrete Semiconductor Products

STGB10NB37LZT4

Active

STMicroelectronics

IGBT, AEC-Q101, 18V, 20A, 175DEG C, 125W ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGB10NB37LZT4

Current - Collector (Ic) (Max) [Max]	20 A
Current - Collector Pulsed (Icm)	40 A
Gate Charge	28 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-65 C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Supplier Device Package	D2PAK
Switching Energy	2.4 mJ, 5 mJ
Td (on/off) @ 25°C [custom]	1.3 µs
Td (on/off) @ 25°C [custom]	8 µs
Test Condition	5 V, 1 kOhm, 10 A, 328 V
Vce(on) (Max) @ Vge, Ic [Max]	1.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	440 V

STGB10 Series

Trench gate field-stop IGBT, H series 600 V, 10 A high speed

Part	Supplier Device Package	Switching Energy	Reverse Recovery Time (trr)	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Test Condition	Gate Charge	Operating Temperature [Max]	Operating Temperature [Min]	IGBT Type	Mounting Type	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Vce(on) (Max) @ Vge, Ic [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C
STMicroelectronics STGB10H60DF	TO-263 (D2PAK)	83 µJ 140 µJ	107 ns	115 W	600 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 A 10 Ohm 15 V 400 V	57 nC	175 °C	-55 °C	Trench Field Stop	Surface Mount	1.95 V	40 A	20 A
STMicroelectronics STGB10M65DF2	TO-263 (D2PAK)	120 µJ 270 µJ	96 ns	115 W	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 A 15 V 22 Ohm 400 V	28 nC	175 °C	-55 °C	Trench Field Stop	Surface Mount	2 V	40 A	20 A	91 ns	19 ns
STMicroelectronics STGB10NC60HDT4	D2PAK	31.8 µJ 95 µJ	22 ns	65 W	600 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5 A 10 Ohm 15 V 390 V	19.2 nC	150 °C	-55 °C		Surface Mount		30 A	20 A			2.5 V	72 ns	14.2 ns
STMicroelectronics STGB10NB37LZT4	D2PAK	2.4 mJ 5 mJ			440 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1 kOhm 5 V 10 A 328 V	28 nC	175 °C	-65 C		Surface Mount		40 A	20 A	8 µs	1.3 µs	1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.93
		10	$ 3.30
		100	$ 2.67
		500	$ 2.38
	Digi-Reel®	1	$ 3.93
		10	$ 3.30
		100	$ 2.67
		500	$ 2.38
	N/A	124	$ 5.01
	Tape & Reel (TR)	1000	$ 0.84
Newark	Each (Supplied on Cut Tape)	1	$ 5.21
		10	$ 3.76
		25	$ 3.46
		50	$ 3.15
		100	$ 2.85
		250	$ 2.67
		500	$ 2.42
		1000	$ 1.40

Description

General part information

STGB10 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.