Discrete Semiconductor Products
STW26NM60N
UnknownSTMicroelectronics
N-CHANNEL 600 V, 0.135 OHM TYP., 20 A MDMESH II POWER MOSFET IN A TO-247 PACKAGE
Discrete Semiconductor Products
STW26NM60N
UnknownSTMicroelectronics
N-CHANNEL 600 V, 0.135 OHM TYP., 20 A MDMESH II POWER MOSFET IN A TO-247 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STW26NM60N |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1800 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 140 W |
| Rds On (Max) @ Id, Vgs | 165 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 586 | $ 7.50 | |
| Tube | 1 | $ 7.21 | ||
| 30 | $ 5.75 | |||
| 120 | $ 5.15 | |||
| 510 | $ 4.54 | |||
| 1020 | $ 4.09 | |||
| 2010 | $ 3.83 | |||
Description
General part information
STW26 Series
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources