Discrete Semiconductor Products
STW26N60M2
ActiveSTMicroelectronics
N-CHANNEL 600 V, 140 MOHM TYP., 20 A MDMESH M2 POWER MOSFET IN A TO-247 PACKAGE
Discrete Semiconductor Products
STW26N60M2
ActiveSTMicroelectronics
N-CHANNEL 600 V, 140 MOHM TYP., 20 A MDMESH M2 POWER MOSFET IN A TO-247 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STW26N60M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1360 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 169 W |
| Rds On (Max) @ Id, Vgs | 165 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 3.03 | |
| 10 | $ 2.54 | |||
| 100 | $ 2.06 | |||
| 600 | $ 1.83 | |||
| 1200 | $ 1.57 | |||
| 2400 | $ 1.48 | |||
| 5400 | $ 1.42 | |||
Description
General part information
STW26NM60N Series
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources