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TO-220-3 Full Pack
Discrete Semiconductor Products

MJF122G

Active
ON Semiconductor

5.0 A, 100 V NPN DARLINGTON BIPOLAR POWER TRANSISTOR

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TO-220-3 Full Pack
Discrete Semiconductor Products

MJF122G

Active
ON Semiconductor

5.0 A, 100 V NPN DARLINGTON BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationMJF122G
Current - Collector (Ic) (Max)5 A
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]2000
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-220-3 Full Pack
Power - Max [Max]2 W
Supplier Device PackageTO-220FP
Vce Saturation (Max) @ Ib, Ic3.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.54
10$ 0.98
100$ 0.65
500$ 0.51
1000$ 0.47
2000$ 0.43
5000$ 0.39
10000$ 0.36
NewarkEach 10$ 0.77
100$ 0.62
500$ 0.54
1000$ 0.42
2500$ 0.41
10000$ 0.38
ON SemiconductorN/A 1$ 0.39

Description

General part information

MJF122 Series

The Darlington Bipolar Power Transistor is designed for general-purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heat sink or chassis.