MJF122 Series

5.0 A, 100 V NPN Darlington Bipolar Power Transistor

Catalog

5.0 A, 100 V NPN Darlington Bipolar Power Transistor

Part	Package / Case	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Current - Collector (Ic) (Max)	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor MJF122	TO-220-3 Full Pack	Through Hole	2000	2 W	3.5 V	TO-220FP	5 A	10 µA	100 V	150 °C	-65 °C
ON Semiconductor MJF122G	TO-220-3 Full Pack	Through Hole	2000	2 W	3.5 V	TO-220FP	5 A	10 µA	100 V	150 °C	-65 °C

Catalog

5.0 A, 100 V NPN Darlington Bipolar Power Transistor

Key Features

• Electrically Similar to the Popular TIP122 and TIP127

• 100 VCEO(sus)

• 5 A Rated Collector Current

• No Isolating Washers Required

• Reduced System Cost

• High DC Current Gain 2000 (Min) @ IC= 3 Adc

• UL Recognized, File #E69369, to 3500 VRMSIsolation

• Pb-Free Packages are Available

Description

The Darlington Bipolar Power Transistor is designed for general-purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heat sink or chassis.