Specification	MJF122

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	2000
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220FP
Vce Saturation (Max) @ Ib, Ic	3.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

MJF122 Series

5.0 A, 100 V NPN Darlington Bipolar Power Transistor

Part	Package / Case	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Current - Collector (Ic) (Max)	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor MJF122	TO-220-3 Full Pack	Through Hole	2000	2 W	3.5 V	TO-220FP	5 A	10 µA	100 V	150 °C	-65 °C
ON Semiconductor MJF122G	TO-220-3 Full Pack	Through Hole	2000	2 W	3.5 V	TO-220FP	5 A	10 µA	100 V	150 °C	-65 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MJF122 Series

The Darlington Bipolar Power Transistor is designed for general-purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heat sink or chassis.