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Discrete Semiconductor Products
JAN2N6059
ActiveMicrochip Technology
100V 12A 150W NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES
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Search across all available documentation for this part.
Documents2N6058 and 2N6059
Discrete Semiconductor Products
JAN2N6059
ActiveMicrochip Technology
100V 12A 150W NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES
Deep-Dive with AI
Documents2N6058 and 2N6059
Technical Specifications
Parameters and characteristics for this part
| Specification | JAN2N6059 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 12 A |
| Current - Collector Cutoff (Max) [Max] | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 1000 |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-3, TO-204AA |
| Power - Max [Max] | 150 W |
| Qualification | MIL-PRF-19500/502 |
| Supplier Device Package | TO-204AA (TO-3) |
| Vce Saturation (Max) @ Ib, Ic | 3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 47.97 | |
| Microchip Direct | N/A | 1 | $ 51.66 | |
| Newark | Each | 100 | $ 47.97 | |
| 500 | $ 46.13 | |||
Description
General part information
JAN2N6059-Darlington Series
This specification covers the performance requirements for NPN silicon power Darlington, 2N6058 and 2N6059 transistors. Three levels of product assurance are (JAN, JANTX and JANTXV) provided for each encapsulated device as specified in MIL-PRF-19500/502.
Documents
Technical documentation and resources