JAN2N6059-Darlington Series

Darlington NPN Silicon Power 80V 100V, 12A

Catalog

Darlington NPN Silicon Power 80V 100V, 12A

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Qualification	Grade	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic
Microchip Technology JAN2N6059	Through Hole	-55 °C	175 ░C	TO-204AA TO-3	12 A	100 V	1 mA	150 W	MIL-PRF-19500/502	Military	1000	TO-204AA (TO-3)	3 V

Catalog

Darlington NPN Silicon Power 80V 100V, 12A

Key Features

- The device package outlines are as follows: TO-204AA (similar to TO-3) for all encapsulated device types.

Description

This specification covers the performance requirements for NPN silicon power Darlington, 2N6058 and 2N6059 transistors. Three levels of product assurance are (JAN, JANTX and JANTXV) provided for each encapsulated device as specified in MIL-PRF-19500/502.