Discrete Semiconductor Products
CSD19532Q5B
ActiveTexas Instruments
100-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 4.9 MOHM
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Discrete Semiconductor Products
CSD19532Q5B
ActiveTexas Instruments
100-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 4.9 MOHM
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD19532Q5B |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4810 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 195 W, 3.1 W |
| Rds On (Max) @ Id, Vgs | 4.9 mOhm |
| Supplier Device Package | 8-VSON-CLIP (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.28 | |
| 10 | $ 2.13 | |||
| 100 | $ 1.48 | |||
| 500 | $ 1.20 | |||
| 1000 | $ 1.11 | |||
| Digi-Reel® | 1 | $ 3.28 | ||
| 10 | $ 2.13 | |||
| 100 | $ 1.48 | |||
| 500 | $ 1.20 | |||
| 1000 | $ 1.11 | |||
| Tape & Reel (TR) | 2500 | $ 0.96 | ||
| Texas Instruments | LARGE T&R | 1 | $ 1.72 | |
| 100 | $ 1.42 | |||
| 250 | $ 1.02 | |||
| 1000 | $ 0.77 | |||
Description
General part information
CSD19532KTT Series
This 100 V, 4.6 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
This 100 V, 4.6 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Documents
Technical documentation and resources
