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TO-263 (KTT)
Discrete Semiconductor Products

CSD19532KTTT

Active
Texas Instruments

100-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE D2PAK, 5.6 MOHM

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TO-263 (KTT)
Discrete Semiconductor Products

CSD19532KTTT

Active
Texas Instruments

100-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE D2PAK, 5.6 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD19532KTTT
Current - Continuous Drain (Id) @ 25°C200 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs57 nC
Input Capacitance (Ciss) (Max) @ Vds5060 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-263AA, D2PAK (3 Leads + Tab), TO-263-4
Power Dissipation (Max) [Max]250 W
Rds On (Max) @ Id, Vgs [Max]5.6 mOhm
Supplier Device PackageTO-263 (DDPAK-3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.94
10$ 1.63
Digi-Reel® 1$ 1.94
10$ 1.63
Tape & Reel (TR) 50$ 1.53
100$ 1.32
250$ 1.29
Texas InstrumentsSMALL T&R 1$ 2.31
100$ 1.90
250$ 1.37
1000$ 1.03

Description

General part information

CSD19532KTT Series

This 100 V, 4.6 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

This 100 V, 4.6 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.