Part	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Power Dissipation (Max)
ON Semiconductor FDMS8320LDC	1.1 mOhm	20 V	11635 pF	Surface Mount	3 V	8-PowerTDFN	3.2 W 125 W	170 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	40 V	4.5 V 10 V	8-PQFN (5x6)	N-Channel	44 A 130 A
ON Semiconductor FDMS8320LDC
ON Semiconductor FDMS8320L	1.1 mOhm	20 V	11110 pF	Surface Mount	3 V	8-PowerTDFN		170 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	40 V	4.5 V 10 V	8-PQFN (5x6)	N-Channel	36 A 100 A	2.5 W	104 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	190	$ 1.58
		190	$ 1.58
	Cut Tape (CT)	1	$ 3.93
		1	$ 3.93
		10	$ 2.58
		10	$ 2.58
		100	$ 1.82
		100	$ 1.82
		500	$ 1.49
		500	$ 1.49
		1000	$ 1.38
		1000	$ 1.38
	Digi-Reel®	1	$ 3.93
		1	$ 3.93
		10	$ 2.58
		10	$ 2.58
		100	$ 1.82
		100	$ 1.82
		500	$ 1.49
		500	$ 1.49
		1000	$ 1.38
		1000	$ 1.38
	Tape & Reel (TR)	3000	$ 1.37
		3000	$ 1.37
Newark	Each (Supplied on Full Reel)	3000	$ 1.64
		6000	$ 1.53
		12000	$ 1.42
		18000	$ 1.37
		30000	$ 1.35
ON Semiconductor	N/A	1	$ 0.93

Description

General part information

FDMS8320LDC Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance.

Documents

Technical documentation and resources