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ONSEMI FDMS8320L
Discrete Semiconductor Products

FDMS8320L

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 40 V, 248 A, 800 ΜOHM, POWER 56, SURFACE MOUNT

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ONSEMI FDMS8320L
Discrete Semiconductor Products

FDMS8320L

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 40 V, 248 A, 800 ΜOHM, POWER 56, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMS8320L
Current - Continuous Drain (Id) @ 25°C36 A, 100 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs170 nC
Input Capacitance (Ciss) (Max) @ Vds11110 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.5 W
Power Dissipation (Max)104 W
Rds On (Max) @ Id, Vgs1.1 mOhm
Supplier Device Package8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.24
Digi-Reel® 1$ 2.24
Tape & Reel (TR) 3000$ 1.83
NewarkEach (Supplied on Cut Tape) 1$ 3.04
10$ 2.63
25$ 2.48
ON SemiconductorN/A 1$ 0.88

Description

General part information

FDMS8320LDC Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance.