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Discrete Semiconductor Products

STP23NM50N

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STMicroelectronics

N-CHANNEL 500 V, 0.162 OHM, 17 A, TO-220 MDMESH(TM) II POWER MOSFET

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DocumentsSTP23NM50N | Datasheet AN2842 +15

Discrete Semiconductor Products

STP23NM50N

Active

STMicroelectronics

N-CHANNEL 500 V, 0.162 OHM, 17 A, TO-220 MDMESH(TM) II POWER MOSFET

Deep-Dive with AI

DocumentsSTP23NM50N | Datasheet AN2842 +15

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP23NM50N

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	45 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1330 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STP23NM50N Series

N-channel 500 V, 0.162 Ohm, 17 A, TO-220 MDmesh(TM) II Power MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package
STMicroelectronics STP23NM50N	17 A	Through Hole	190 mOhm	N-Channel	45 nC	25 V	150 °C	TO-220-3	10 V	1330 pF	MOSFET (Metal Oxide)	4 V	500 V	125 W	TO-220

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 4.97
		10	$ 2.81
		25	$ 2.43
Digikey	N/A	0	$ 6.05

Description

General part information

STP23NM50N Series

These devices are made using the second generation of MDmesh™technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.