STP23NM50N Series

N-channel 500 V, 0.162 Ohm, 17 A, TO-220 MDmesh(TM) II Power MOSFET

Catalog

N-channel 500 V, 0.162 Ohm, 17 A, TO-220 MDmesh(TM) II Power MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package
STMicroelectronics STP23NM50N	17 A	Through Hole	190 mOhm	N-Channel	45 nC	25 V	150 °C	TO-220-3	10 V	1330 pF	MOSFET (Metal Oxide)	4 V	500 V	125 W	TO-220

Catalog

N-channel 500 V, 0.162 Ohm, 17 A, TO-220 MDmesh(TM) II Power MOSFET

Description

These devices are made using the second generation of MDmesh™technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.