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Microchip Technology-JANTX2N2481 GP BJT Trans GP BJT NPN 15V 360mW 3-Pin TO-18 Bag
Discrete Semiconductor Products

JANTX2N930

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Microchip Technology

TRANS GP BJT NPN 45V 0.03A 300MW 3-PIN TO-18 BAG

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Documents2N930
Microchip Technology-JANTX2N2481 GP BJT Trans GP BJT NPN 15V 360mW 3-Pin TO-18 Bag
Discrete Semiconductor Products

JANTX2N930

Active
Microchip Technology

TRANS GP BJT NPN 45V 0.03A 300MW 3-PIN TO-18 BAG

Deep-Dive with AI

Documents2N930

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N930
Current - Collector (Ic) (Max) [Max]30 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature [Max]200 C
Operating Temperature [Min]-55 °C
Package / CaseTO-18-3 Metal Can, TO-206AA
QualificationMIL-PRF-19500/253
Supplier Device PackageTO-18
Supplier Device PackageTO-206AA
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max)45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 8.01
100$ 7.83
DigikeyBulk 1$ 9.40
100$ 8.73
Microchip DirectN/A 1$ 9.39
NewarkEach 100$ 8.72
500$ 8.39

Description

General part information

JANTXV2N930-Transistor Series

This 2N930, high-frequency, epitaxial planar transistor, features low saturation voltage and is military qualified to the JANS level for high-reliability applications. This device is available in a TO-206AA (TO-18) package and surfacemount UB.

Documents

Technical documentation and resources