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TO-18
Discrete Semiconductor Products

JAN2N930

Active
Microchip Technology

SMALL-SIGNAL BJT TO-18 ROHS COMPLIANT: YES

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Documents2N930
TO-18
Discrete Semiconductor Products

JAN2N930

Active
Microchip Technology

SMALL-SIGNAL BJT TO-18 ROHS COMPLIANT: YES

Deep-Dive with AI

Documents2N930

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN2N930
Current - Collector (Ic) (Max) [Max]30 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature [Max]200 C
Operating Temperature [Min]-55 °C
Package / CaseTO-18-3 Metal Can, TO-206AA
QualificationMIL-PRF-19500/253
Supplier Device PackageTO-18
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max)45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 9.18
Microchip DirectN/A 1$ 9.88
NewarkEach 100$ 9.18
500$ 8.83

Description

General part information

JANTXV2N930-Transistor Series

This 2N930, high-frequency, epitaxial planar transistor, features low saturation voltage and is military qualified to the JANS level for high-reliability applications. This device is available in a TO-206AA (TO-18) package and surfacemount UB.

Documents

Technical documentation and resources