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Technical Specifications
Parameters and characteristics for this part
| Specification | JANTX2N5793 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 600 mA |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 40 |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-78-6 Metal Can |
| Power - Max [Max] | 600 mW |
| Qualification | MIL-PRF-19500/495 |
| Supplier Device Package | TO-78-6 |
| Transistor Type | 2 NPN (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 900 mV |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 50 | $ 120.34 | |
| Microchip Direct | N/A | 1 | $ 120.34 | |
Description
General part information
JANTX2N5793-Dual-Transistor Series
This specification covers the performance requirements for unitized, dual transistors which contains a pair of electrically isolated matched and unmatched NPN, silicon , 2N5793 and 2N5794 Unitized, dual 2N2222A transistors in one package. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/495. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.
Documents
Technical documentation and resources
