JANTX2N5793-Dual-Transistor Series

NPN Silicon Dual 40V, 0.6A

Catalog

NPN Silicon Dual 40V, 0.6A

Part	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Transistor Type	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Package / Case	Power - Max [Max]	Grade	Qualification
Microchip Technology 2N5793U/TR	40 V	40	900 mV	Surface Mount	2 NPN (Dual)	600 mA	10 µA	U	6-SMD No Lead	600 mW
Microchip Technology JANTX2N5793	40 V	40	900 mV	Through Hole	2 NPN (Dual)	600 mA	10 µA	TO-78-6	TO-78-6 Metal Can	600 mW	Military	MIL-PRF-19500/495
Microchip Technology 2N5793U	40 V	40	900 mV	Surface Mount	2 NPN (Dual)	600 mA	10 µA	U	6-SMD No Lead	600 mW
Microchip Technology 2N5793AU/TR	40 V	40	900 mV	Surface Mount	2 NPN (Dual)	600 mA	10 µA	U	6-SMD No Lead	600 mW

Catalog

NPN Silicon Dual 40V, 0.6A

Key Features

- The device package for the encapsulated device types are as follows: Through hole mount metal can similar to TO-99, surface mount version LCC6 (U) and surface mount versions UC.

Description

This specification covers the performance requirements for unitized, dual transistors which contains a pair of electrically isolated matched and unmatched NPN, silicon , 2N5793 and 2N5794 Unitized, dual 2N2222A transistors in one package. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/495. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.