
VRF152GMP
ActiveRF POWER FIELD-EFFECT TRANSISTOR, 2-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
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VRF152GMP
ActiveRF POWER FIELD-EFFECT TRANSISTOR, 2-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
Technical Specifications
Parameters and characteristics for this part
| Specification | VRF152GMP |
|---|---|
| null | |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 356.13 | |
| Microchip Direct | PAIR PKG | 1 | $ 356.13 | |
| 100 | $ 301.36 | |||
| 250 | $ 287.65 | |||
| 500 | $ 279.83 | |||
| 1000 | $ 272.00 | |||
| 5000 | $ 260.26 | |||
| Newark | Each | 1 | $ 356.13 | |
| 100 | $ 301.36 | |||
| 250 | $ 287.65 | |||
| 500 | $ 279.83 | |||
Description
General part information
RF-MOSFET-140V Series
The VRF family of RF MOSFETs includes improved replacements for
industry-standard RF transistors. They provide improved ruggedness by
increasing the Bvdss over 30 percent from the industry-standard 125V to 170V
Documents
Technical documentation and resources