VRF152
ActiveRF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, GALLIUM NITRIDE, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
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VRF152
ActiveRF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, GALLIUM NITRIDE, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
Technical Specifications
Parameters and characteristics for this part
| Specification | VRF152 |
|---|---|
| Configuration | N-Channel |
| Current - Test | 250 mA |
| Current Rating (Amps) | 50 µA |
| Frequency | 175 MHz |
| Gain | 14 dBi |
| Package / Case | M174 |
| Power - Output | 150 W |
| Supplier Device Package | M174 |
| Technology | MOSFET (Metal Oxide) |
| Voltage - Rated | 130 V |
| Voltage - Test | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 105.18 | |
| 100 | $ 72.24 | |||
| Microchip Direct | PIZZA BOX | 1 | $ 105.18 | |
| 100 | $ 89.01 | |||
| 250 | $ 84.95 | |||
| 500 | $ 82.65 | |||
| 1000 | $ 80.33 | |||
| 5000 | $ 76.87 | |||
Description
General part information
RF-MOSFET-140V Series
The VRF family of RF MOSFETs includes improved replacements for
industry-standard RF transistors. They provide improved ruggedness by
increasing the Bvdss over 30 percent from the industry-standard 125V to 170V
Documents
Technical documentation and resources
