MRH25N12U3
ActiveENHANCED N-CHANNEL RADIATION-HARDENED 250V 12.4A MOSFET
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MRH25N12U3
ActiveENHANCED N-CHANNEL RADIATION-HARDENED 250V 12.4A MOSFET
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Technical Specifications
Parameters and characteristics for this part
| Specification | MRH25N12U3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12.4 A |
| Drain to Source Voltage (Vdss) | 250 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12 V, 12 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1980 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 3-SMD, No Lead |
| Power Dissipation (Max) | 75 W |
| Rds On (Max) @ Id, Vgs | 210 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 576.58 | |
| 100 | $ 535.39 | |||
| 500 | $ 514.80 | |||
| 1000 | $ 485.97 | |||
Description
General part information
JANSR2N7593U3-MOSFET Series
Microchip’s new M6 technology has been developed to provide extreme reliability and enhanced radiation hardness for hermetic Power MOSFETs targeted for space and military applications. Microchip Rad-Hard MOSFETs feature low RDS(on) and low total gate charge. The devices have been developed for Total Dose and Single-Event environments. The M6 will perform in extreme-environment applications and will remain within specification in radiation environments up to 300 Krad total ionizing dose (TID).
The JANSR2N7593U3 device is designed for the following applications:
• DC–DC converters
Documents
Technical documentation and resources