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TO-247-3
Discrete Semiconductor Products

FGH40T65SPD-F155

Obsolete
ON Semiconductor

IGBT, 650V, 40A FIELD STOP TRENCH

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TO-247-3
Discrete Semiconductor Products

FGH40T65SPD-F155

Obsolete
ON Semiconductor

IGBT, 650V, 40A FIELD STOP TRENCH

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFGH40T65SPD-F155
Current - Collector (Ic) (Max) [Max]80 A
Current - Collector Pulsed (Icm)120 A
Gate Charge35 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]267 W
Reverse Recovery Time (trr)34 ns
Supplier Device PackageTO-247-3
Switching Energy280 µJ, 1.16 mJ
Td (on/off) @ 25°C37 ns
Td (on/off) @ 25°C16 ns
Test Condition40 A, 15 V, 400 V, 6 Ohm
Vce(on) (Max) @ Vge, Ic2.4 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

FGH40T65SP_F085 Series

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on−state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into the deviceis a soft and fast co−packaged free wheeling diode with a low forwardvoltage.