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TO-247-4
Discrete Semiconductor Products

FGH40T120SQDNL4

Active
ON Semiconductor

IGBT, 160 A, 1.78 V, 454 W, 1.2 KV, TO-247, 4 PINS

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TO-247-4
Discrete Semiconductor Products

FGH40T120SQDNL4

Active
ON Semiconductor

IGBT, 160 A, 1.78 V, 454 W, 1.2 KV, TO-247, 4 PINS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFGH40T120SQDNL4
Current - Collector (Ic) (Max) [Max]160 A
Gate Charge221 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-4
Power - Max [Max]454 W
Reverse Recovery Time (trr)166 ns
Supplier Device PackageTO-247-4L
Switching Energy1.4 mJ, 1.1 mJ
Test Condition40 A, 15 V, 600 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic1.95 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 7.08
10$ 4.88
100$ 4.61
NewarkEach 1$ 9.05
10$ 8.46
25$ 8.15
50$ 7.91
ON SemiconductorN/A 1$ 4.91

Description

General part information

FGH40T65SP_F085 Series

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on−state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into the deviceis a soft and fast co−packaged free wheeling diode with a low forwardvoltage.