
FGH40T120SQDNL4
ActiveIGBT, 160 A, 1.78 V, 454 W, 1.2 KV, TO-247, 4 PINS

FGH40T120SQDNL4
ActiveIGBT, 160 A, 1.78 V, 454 W, 1.2 KV, TO-247, 4 PINS
Technical Specifications
Parameters and characteristics for this part
| Specification | FGH40T120SQDNL4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 160 A |
| Gate Charge | 221 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-4 |
| Power - Max [Max] | 454 W |
| Reverse Recovery Time (trr) | 166 ns |
| Supplier Device Package | TO-247-4L |
| Switching Energy | 1.4 mJ, 1.1 mJ |
| Test Condition | 40 A, 15 V, 600 V, 10 Ohm |
| Vce(on) (Max) @ Vge, Ic | 1.95 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 7.08 | |
| 10 | $ 4.88 | |||
| 100 | $ 4.61 | |||
| Newark | Each | 1 | $ 9.05 | |
| 10 | $ 8.46 | |||
| 25 | $ 8.15 | |||
| 50 | $ 7.91 | |||
| ON Semiconductor | N/A | 1 | $ 4.91 | |
Description
General part information
FGH40T65SP_F085 Series
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on−state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into the deviceis a soft and fast co−packaged free wheeling diode with a low forwardvoltage.
Documents
Technical documentation and resources