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Pkg 5547
Discrete Semiconductor Products

SI5853CDC-T1-E3

Obsolete

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DocumentsDatasheet
Pkg 5547
Discrete Semiconductor Products

SI5853CDC-T1-E3

Obsolete

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSI5853CDC-T1-E3
Current - Continuous Drain (Id) @ 25°C4 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]11 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]350 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Power Dissipation (Max)1.5 W, 3.1 W
Rds On (Max) @ Id, Vgs104 mOhm
Supplier Device Package1206-8 ChipFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

SI5853 Series

P-Channel 20 V 4A (Tc) 1.5W (Ta), 3.1W (Tc) Surface Mount 1206-8 ChipFET™

Documents

Technical documentation and resources