
Discrete Semiconductor Products
SI5853CDC-T1-E3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET P-CH 20V 4A 1206-8
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Discrete Semiconductor Products
SI5853CDC-T1-E3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET P-CH 20V 4A 1206-8
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | SI5853CDC-T1-E3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.8 V |
| FET Feature | Schottky Diode (Isolated) |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 11 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 350 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Power Dissipation (Max) | 1.5 W, 3.1 W |
| Rds On (Max) @ Id, Vgs | 104 mOhm |
| Supplier Device Package | 1206-8 ChipFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SI5853 Series
P-Channel 20 V 4A (Tc) 1.5W (Ta), 3.1W (Tc) Surface Mount 1206-8 ChipFET™
Documents
Technical documentation and resources