Discrete Semiconductor Products

SI5853DDC-T1-E3

Obsolete

MOSFET P-CH 20V 4A 1206-8

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 4A 1206-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI5853DDC-T1-E3

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC
Input Capacitance (Ciss) (Max) @ Vds	320 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	3.1 W, 1.3 W
Rds On (Max) @ Id, Vgs	105 mOhm
Supplier Device Package	1206-8 ChipFET™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SI5853DDC-T1-E3	1 V	P-Channel	4 A	320 pF	Schottky Diode (Isolated)	MOSFET (Metal Oxide)	20 V	Surface Mount	1.3 W 3.1 W	12 nC	1206-8 ChipFET™	105 mOhm	8 V	1.8 V 4.5 V	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SI5853CDC-T1-E3	1 V	P-Channel	4 A		Schottky Diode (Isolated)	MOSFET (Metal Oxide)	20 V	Surface Mount	1.5 W 3.1 W		1206-8 ChipFET™	104 mOhm	8 V	1.8 V 4.5 V	-55 °C	150 °C	350 pF	11 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 4A (Tc) 1.3W (Ta), 3.1W (Tc) Surface Mount 1206-8 ChipFET™

Technical documentation and resources