SI5853 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET P-CH 20V 4A 1206-8
| Part | Vgs(th) (Max) @ Id | FET Type | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Technology | Drain to Source Voltage (Vdss) | Mounting Type | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Rds On (Max) @ Id, Vgs | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 1 V | P-Channel | 4 A | 320 pF | Schottky Diode (Isolated) | MOSFET (Metal Oxide) | 20 V | Surface Mount | 1.3 W 3.1 W | 12 nC | 1206-8 ChipFET™ | 105 mOhm | 8 V | 1.8 V 4.5 V | -55 °C | 150 °C | ||
Vishay General Semiconductor - Diodes Division | 1 V | P-Channel | 4 A | Schottky Diode (Isolated) | MOSFET (Metal Oxide) | 20 V | Surface Mount | 1.5 W 3.1 W | 1206-8 ChipFET™ | 104 mOhm | 8 V | 1.8 V 4.5 V | -55 °C | 150 °C | 350 pF | 11 nC |