Discrete Semiconductor Products

IRF830LPBF

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 500V 4.5A TO262-3

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Discrete Semiconductor Products

IRF830LPBF

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 500V 4.5A TO262-3

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF830LPBF

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	610 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	3.1 W, 74 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	TO-262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF830 Series

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Mounting Type	FET Type	Package / Case	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [x]
Vishay General Semiconductor - Diodes Division IRF830PBF	500 V	4 V	10 V	TO-220AB	20 V	Through Hole	N-Channel	TO-220-3	74 W	38 nC	-55 °C	150 °C	1.5 Ohm	4.5 A	610 pF	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF830	500 V	4 V	10 V	TO-220AB	20 V	Through Hole	N-Channel	TO-220-3	74 W	38 nC	-55 °C	150 °C	1.5 Ohm	4.5 A	610 pF	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF830L	500 V	4 V	10 V	I2PAK	20 V	Through Hole	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA		38 nC	-55 °C	150 °C	1.5 Ohm	4.5 A	610 pF	MOSFET (Metal Oxide)	3.1 W 74 W
Vishay General Semiconductor - Diodes Division IRF830A	500 V	4.5 V	10 V	TO-220AB	30 V	Through Hole	N-Channel	TO-220-3	74 W	24 nC	-55 °C	150 °C		5 A		MOSFET (Metal Oxide)		1.4 Ohm	620 pF
Vishay General Semiconductor - Diodes Division IRF830SPBF	500 V	4 V	10 V	TO-263 (D2PAK)	20 V	Surface Mount	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		38 nC	-55 °C	150 °C	1.5 Ohm	4.5 A	610 pF	MOSFET (Metal Oxide)	3.1 W 74 W
Vishay General Semiconductor - Diodes Division IRF830APBF-BE3	500 V	4.5 V	10 V	TO-220AB	30 V	Through Hole	N-Channel	TO-220-3	74 W	24 nC	-55 °C	150 °C		5 A		MOSFET (Metal Oxide)		1.4 Ohm	620 pF
Vishay General Semiconductor - Diodes Division IRF830BPBF-BE3	500 V	5 V		TO-220AB	30 V	Through Hole	N-Channel	TO-220-3			-55 °C	150 °C	1.5 Ohm	5.3 A		MOSFET (Metal Oxide)	104 W		325 pF	20 nC
Vishay General Semiconductor - Diodes Division IRF830LPBF	500 V	4 V	10 V	TO-262-3	20 V	Through Hole	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA		38 nC	-55 °C	150 °C	1.5 Ohm	4.5 A	610 pF	MOSFET (Metal Oxide)	3.1 W 74 W
Vishay General Semiconductor - Diodes Division IRF830STRLPBF	500 V	4 V	10 V	TO-263 (D2PAK)	20 V	Surface Mount	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	74 W	38 nC	-55 °C	150 °C	1.5 Ohm	4.5 A	610 pF	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF830STRL	500 V	4 V	10 V	TO-263 (D2PAK)	20 V	Surface Mount	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		38 nC	-55 °C	150 °C	1.5 Ohm	4.5 A	610 pF	MOSFET (Metal Oxide)	3.1 W 74 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 1.09

Description

General part information

IRF830 Series

N-Channel 500 V 4.5A (Tc) 3.1W (Ta), 74W (Tc) Through Hole TO-262-3

Documents

Technical documentation and resources