Discrete Semiconductor Products

IRF830PBF

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Vishay General Semiconductor - Diodes Division

POWER MOSFET, N CHANNEL, 500 V, 4.5 A, 1.5 OHM, TO-220, THROUGH HOLE

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Search across all available documentation for this part.

DocumentsEOL Notices EN Product Change Notice EN +1

Discrete Semiconductor Products

IRF830PBF

Active

Vishay General Semiconductor - Diodes Division

POWER MOSFET, N CHANNEL, 500 V, 4.5 A, 1.5 OHM, TO-220, THROUGH HOLE

Deep-Dive with AI

DocumentsEOL Notices EN Product Change Notice EN +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF830PBF

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	610 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	74 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF830 Series

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Mounting Type	FET Type	Package / Case	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [x]
Vishay General Semiconductor - Diodes Division IRF830PBF	500 V	4 V	10 V	TO-220AB	20 V	Through Hole	N-Channel	TO-220-3	74 W	38 nC	-55 °C	150 °C	1.5 Ohm	4.5 A	610 pF	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF830	500 V	4 V	10 V	TO-220AB	20 V	Through Hole	N-Channel	TO-220-3	74 W	38 nC	-55 °C	150 °C	1.5 Ohm	4.5 A	610 pF	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF830L	500 V	4 V	10 V	I2PAK	20 V	Through Hole	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA		38 nC	-55 °C	150 °C	1.5 Ohm	4.5 A	610 pF	MOSFET (Metal Oxide)	3.1 W 74 W
Vishay General Semiconductor - Diodes Division IRF830A	500 V	4.5 V	10 V	TO-220AB	30 V	Through Hole	N-Channel	TO-220-3	74 W	24 nC	-55 °C	150 °C		5 A		MOSFET (Metal Oxide)		1.4 Ohm	620 pF
Vishay General Semiconductor - Diodes Division IRF830SPBF	500 V	4 V	10 V	TO-263 (D2PAK)	20 V	Surface Mount	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		38 nC	-55 °C	150 °C	1.5 Ohm	4.5 A	610 pF	MOSFET (Metal Oxide)	3.1 W 74 W
Vishay General Semiconductor - Diodes Division IRF830APBF-BE3	500 V	4.5 V	10 V	TO-220AB	30 V	Through Hole	N-Channel	TO-220-3	74 W	24 nC	-55 °C	150 °C		5 A		MOSFET (Metal Oxide)		1.4 Ohm	620 pF
Vishay General Semiconductor - Diodes Division IRF830BPBF-BE3	500 V	5 V		TO-220AB	30 V	Through Hole	N-Channel	TO-220-3			-55 °C	150 °C	1.5 Ohm	5.3 A		MOSFET (Metal Oxide)	104 W		325 pF	20 nC
Vishay General Semiconductor - Diodes Division IRF830LPBF	500 V	4 V	10 V	TO-262-3	20 V	Through Hole	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA		38 nC	-55 °C	150 °C	1.5 Ohm	4.5 A	610 pF	MOSFET (Metal Oxide)	3.1 W 74 W
Vishay General Semiconductor - Diodes Division IRF830STRLPBF	500 V	4 V	10 V	TO-263 (D2PAK)	20 V	Surface Mount	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	74 W	38 nC	-55 °C	150 °C	1.5 Ohm	4.5 A	610 pF	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF830STRL	500 V	4 V	10 V	TO-263 (D2PAK)	20 V	Surface Mount	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		38 nC	-55 °C	150 °C	1.5 Ohm	4.5 A	610 pF	MOSFET (Metal Oxide)	3.1 W 74 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.52
		50	$ 1.22
		100	$ 0.97
		500	$ 0.82
		1000	$ 0.67
		2000	$ 0.63
		5000	$ 0.60
		10000	$ 0.57

Description

General part information

IRF830 Series

The IRF830PBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS, uninterruptable power supply and high speed power switching.

Documents

Technical documentation and resources

EOL Notices EN

Datasheet

Product Change Notice EN

Datasheet