IRF830 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

POWER MOSFET, N CHANNEL, 500 V, 4.5 A, 1.5 OHM, TO-220, THROUGH HOLE

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Mounting Type	FET Type	Package / Case	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [x]
Vishay General Semiconductor - Diodes Division IRF830PBF	500 V	4 V	10 V	TO-220AB	20 V	Through Hole	N-Channel	TO-220-3	74 W	38 nC	-55 °C	150 °C	1.5 Ohm	4.5 A	610 pF	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF830	500 V	4 V	10 V	TO-220AB	20 V	Through Hole	N-Channel	TO-220-3	74 W	38 nC	-55 °C	150 °C	1.5 Ohm	4.5 A	610 pF	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF830L	500 V	4 V	10 V	I2PAK	20 V	Through Hole	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA		38 nC	-55 °C	150 °C	1.5 Ohm	4.5 A	610 pF	MOSFET (Metal Oxide)	3.1 W 74 W
Vishay General Semiconductor - Diodes Division IRF830A	500 V	4.5 V	10 V	TO-220AB	30 V	Through Hole	N-Channel	TO-220-3	74 W	24 nC	-55 °C	150 °C		5 A		MOSFET (Metal Oxide)		1.4 Ohm	620 pF
Vishay General Semiconductor - Diodes Division IRF830SPBF	500 V	4 V	10 V	TO-263 (D2PAK)	20 V	Surface Mount	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		38 nC	-55 °C	150 °C	1.5 Ohm	4.5 A	610 pF	MOSFET (Metal Oxide)	3.1 W 74 W
Vishay General Semiconductor - Diodes Division IRF830APBF-BE3	500 V	4.5 V	10 V	TO-220AB	30 V	Through Hole	N-Channel	TO-220-3	74 W	24 nC	-55 °C	150 °C		5 A		MOSFET (Metal Oxide)		1.4 Ohm	620 pF
Vishay General Semiconductor - Diodes Division IRF830BPBF-BE3	500 V	5 V		TO-220AB	30 V	Through Hole	N-Channel	TO-220-3			-55 °C	150 °C	1.5 Ohm	5.3 A		MOSFET (Metal Oxide)	104 W		325 pF	20 nC
Vishay General Semiconductor - Diodes Division IRF830LPBF	500 V	4 V	10 V	TO-262-3	20 V	Through Hole	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA		38 nC	-55 °C	150 °C	1.5 Ohm	4.5 A	610 pF	MOSFET (Metal Oxide)	3.1 W 74 W
Vishay General Semiconductor - Diodes Division IRF830STRLPBF	500 V	4 V	10 V	TO-263 (D2PAK)	20 V	Surface Mount	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	74 W	38 nC	-55 °C	150 °C	1.5 Ohm	4.5 A	610 pF	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF830STRL	500 V	4 V	10 V	TO-263 (D2PAK)	20 V	Surface Mount	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		38 nC	-55 °C	150 °C	1.5 Ohm	4.5 A	610 pF	MOSFET (Metal Oxide)	3.1 W 74 W