Discrete Semiconductor Products

PMCM6501UPEZ

Obsolete

MOSFET P-CH 20V 6WLCSP

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 6WLCSP

Technical Specifications

Parameters and characteristics for this part

Specification	PMCM6501UPEZ

Current - Continuous Drain (Id) @ 25°C	7.3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	19.1 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	WLCSP, 6-XFBGA
Power Dissipation (Max) [Max]	556 mW
Supplier Device Package	6-WLCSP (1.48x0.98)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V

Part	Technology	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Power Dissipation (Max) [Max]
Freescale Semiconductor - NXP PMCM6501UNEZ	MOSFET (Metal Oxide)	900 mV	6.2 nC	8 V	6-XFBGA WLCSP	20 V	8.7 A	150 °C	21 mOhm	1050 pF	N-Channel	Surface Mount	1.5 V 4.5 V	6-WLCSP (1.48x0.98)
Freescale Semiconductor - NXP PMCM6501UPEZ	MOSFET (Metal Oxide)		19.1 nC	8 V	6-XFBGA WLCSP	20 V	7.3 A	150 °C			P-Channel	Surface Mount	2.5 V 4.5 V	6-WLCSP (1.48x0.98)	556 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 7.3A (Tj) 556mW Surface Mount 6-WLCSP (1.48x0.98)

Technical documentation and resources