Specification	PMCM6501UPEZ

Current - Continuous Drain (Id) @ 25°C	7.3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	19.1 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	WLCSP, 6-XFBGA
Power Dissipation (Max) [Max]	556 mW
Supplier Device Package	6-WLCSP
Supplier Device Package [x]	1.48
Supplier Device Package [y]	0.98
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V

PMCM6501 Series

20 V, P-channel Trench MOSFET

Part	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	Supplier Device Package [y]	Supplier Device Package [x]	Supplier Device Package	FET Type	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
Nexperia USA Inc. PMCM6501UNEZ	21 mOhm	MOSFET (Metal Oxide)	900 mV	0.98	1.48	6-WLCSP	N-Channel	150 °C	1.5 V 4.5 V	6.2 nC	1050 pF	400 mW	20 V	6-XFBGA WLCSP	8.7 A	Surface Mount	8 V
Nexperia USA Inc. PMCM6501UPEZ		MOSFET (Metal Oxide)		0.98	1.48	6-WLCSP	P-Channel	150 °C				556 mW	20 V	6-XFBGA WLCSP	7.3 A	Surface Mount	8 V	19.1 nC	2.5 V	4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

Technical documentation and resources